Breakdown voltage of metal-oxide resistors in liquid argon

Modeling of Voltage-Dependent Diffused Resistors

A voltage-dependent diffused resistor model has been developed using conventional voltage controlled current sources (VCCS’s) defined by a two-dimensional polynomial for simulations of mixed-signal circuits. The polynomial coefficients can be defined by a simple firstorder polynomial which can be a function of geometry and process variables to accurately reflect the manufacturing process. Alter...

Breakdown behavior in radio-frequency argon discharges

Generation of CMOS voltage - controlled floating resistors

A new generation method to implement CMOS floating resistors is presented. The generation method depends on the linearization of the differential current of two matched NMOS transistors in two alternative configurations. The CMOS floating resistors implemented are based on using MOS transistors operating in the saturation region with their sources connected to their substrates. New CMOS floatin...

Static Current-Voltage Characteristics of Silicon n+-i-n+ Resistors at Liquid Helium Temperatures

The behaviour of the (I-V) characteristics is investigated in n+-i-n+ highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants imp...

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...